发明名称 DEVICE FOR SEMICONDUCTOR PRODUCTION
摘要 PURPOSE:Heater are set in the tube between the high-temperature oven and the low-temperature oven to control the heat dissipation so that the temperature valley in the temperature gradient zone is improved to always form appropriate conditions for crystal growth. CONSTITUTION:In the pressure vessel 18 filled with an inert gas, tubular high- temperature oven 15 and the low-temperature oven 16 which have the core tubes 19, 20 provided with heaters 21, 22 wound around the outer surfaces, the insulation layers 23, 24 and the protection layers 25, 25 thereon are set where the heaters are connected with a oven 14 which has core tube 27 provided with heater 30 wound around the core, the insulation layer 28 and protection layer 29. When a temperature valley is observed in the temperature-gredient zone, electricity is applied to the heater 30 to effect heating and the valley gap is filled up.
申请公布号 JPS62132794(A) 申请公布日期 1987.06.16
申请号 JP19850270811 申请日期 1985.12.03
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 MASUKATA YOSHIMASA;TAKEUCHI KIYOSHI;KURIHARA KAZUO;YOSHIDA KIYOTERU
分类号 C30B11/00;H01L21/18 主分类号 C30B11/00
代理机构 代理人
主权项
地址