| 摘要 |
<p>A laser processing method whereby a plate-shaped object to be processed (1), comprising a hexagonal crystal SiC substrate (12) having a surface (12a) that forms an angle equivalent to the off-angle relative to the c-plane, is prepared. Modified regions (7a, 7m) are then formed inside the SiC substrate (12) along planned cutting lines (5a, 5m) by irradiating a laser light (L). A first number of rows of modified regions (7a) are formed along the planned cutting line (5a) parallel to the surface (12a) and the a-plane. A second number of rows, being less than the first number of rows, of modified regions (7m) are formed along the planned cutting line (5m) parallel to the surface (12a) and the m-surface.</p> |
