| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a unit comprising a seed material and a feed material for liquid phase epitaxial growth of single crystal silicon carbide enabling to reduce the cost required for liquid phase epitaxial growth of single crystal silicon carbide. <P>SOLUTION: Each of the feed material 11 and the seed material 12 has a surface layer containing polycrystalline silicon carbide whose crystal polymorph is 3C, and through X-ray diffractometry of the each surface layer, a primary diffraction peak corresponding to at least one of (111) crystal plane, (200) crystal plane, (220) crystal plane and (311) crystal plane is observed. The average crystallite diameter calculated from the at least one primary diffraction peak of the feed material 11 is smaller than that calculated from the at least one primary diffraction peak of the seed material 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
