发明名称 |
POLYMER, PHOTORESIST COMPOSITION, AND METHOD OF FORMING PHOTOLITHOGRAPHIC PATTERN |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide polymers and photoresist compositions useful in forming photolithographic patterns. <P>SOLUTION: The polymer has a cyclic acetal backbone on a side chain. The photoresist composition contains the polymer and a photo-acid generator. The polymer is a polymer of (meth)acrylic acid ester that has the cyclic acetal backbone on the side chain. A substrate is coated with photoresist. A method of forming the photolithographic patterns is provided. A substrate, and a coated substrate that contains a layer of photoresist composition on a surface of the substrate are provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012131988(A) |
申请公布日期 |
2012.07.12 |
申请号 |
JP20110260184 |
申请日期 |
2011.11.29 |
申请人 |
ROHM & HAAS ELECTRONIC MATERIALS LLC;DOW GLOBAL TECHNOLOGIES LLC |
发明人 |
BAE YOUNG CHEOL;WILSON DAVID RICHARD;SUN JIBIN |
分类号 |
C08F220/28;G03F7/038;G03F7/039;H01L21/027 |
主分类号 |
C08F220/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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