发明名称 POLYMER, PHOTORESIST COMPOSITION, AND METHOD OF FORMING PHOTOLITHOGRAPHIC PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide polymers and photoresist compositions useful in forming photolithographic patterns. <P>SOLUTION: The polymer has a cyclic acetal backbone on a side chain. The photoresist composition contains the polymer and a photo-acid generator. The polymer is a polymer of (meth)acrylic acid ester that has the cyclic acetal backbone on the side chain. A substrate is coated with photoresist. A method of forming the photolithographic patterns is provided. A substrate, and a coated substrate that contains a layer of photoresist composition on a surface of the substrate are provided. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012131988(A) 申请公布日期 2012.07.12
申请号 JP20110260184 申请日期 2011.11.29
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC;DOW GLOBAL TECHNOLOGIES LLC 发明人 BAE YOUNG CHEOL;WILSON DAVID RICHARD;SUN JIBIN
分类号 C08F220/28;G03F7/038;G03F7/039;H01L21/027 主分类号 C08F220/28
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