A COMPOSITION FOR OXIDE THIN FILM, PREPARATION METHOD OF THE COMPOSITION, METHODS FOR FORMING THE OXIDE THIN FILM USING THE COMPOSITION, AND AN ELECTRICAL DEVICE USING THE COMPOSITION

摘要

PURPOSE: A composition for oxide thin film, a manufacturing method thereof, oxide thin film and electric component using the composition are provided to enable formation of oxide semiconductor thin films through a low-temperature process by including a stabilizer. CONSTITUTION: A composition for oxide thin film comprises a first compound, a second compound and a stabilizer. The first compound supplies zinc. The second compound supplies one or more which is selected from indium, tin, gallium, hafnium, magnesium, aluminum, yttrium, tantalum, titanium, zirconium, barium, lanthanum, manganese, tungsten, molybdenum, cerium, chrome, scandium, silicon, neodymium and strontium. The stabilizer controls the conductivity. The stabilizer is included 2-12 times total mole number of the first compound and the second compound. A manufacturing method of the oxide thin film comprises the following steps: spreading the composition for the oxide thin film on the substrate; and heat treating the substrate at higher than 100 deg. Celsius and 450 deg. Celsius or less.