| 摘要 |
The present invention relates to a method for fabricating a substrate for a semiconductor device comprising an interface region (9) between a first layer (5) and a second layer (7) having different electrical properties and an exposed surface (13), wherein at least the second layer (7) includes defects and/or dislocations, the method comprising the steps of: a) removing material at one or more locations of the defects and/or dislocations, thereby forming pits (13a-13d), wherein the pits intersect the interface region (9), and b) passivating the pits (3a-13d). The invention also relates to a corresponding semiconductor device structure. |
