| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure in which a film thickness of a resin layer is thinner than a thickness of a fifth substrate, in which stress generated due to differences in thermal expansion coefficient among materials is unlikely to affect a circuit formation part of the fifth substrate. <P>SOLUTION: A semiconductor device comprises a first substrate 101 having a recess on one principal surface 101S, a second substrate 103 provided in the recess and serving as a functional element provided with electrodes 108 on one principal surface and another principal surface is a bonding surface with an inner bottom 101B of the recess, a resin layer 104 filling between a side face 103W of the second substrate 103 and the side face 101W of the recess and disposed so as to cover the first substrate 101 and the second substrate 103, a through hole penetrating the resin layer 104 provided on the electrode 108, a wiring layer 105 with one end side being located on the resin layer 104 and another end side being electrically connected with the electrode 108 through the through hole, and bumps 107 placed on the one end side of the wiring layer 105. <P>COPYRIGHT: (C)2012,JPO&INPIT |
