| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bisection-type GaN-based semiconductor laser element having a composition and structure which prevents damage to a saturable absorption region from occurring easily. <P>SOLUTION: The semiconductor laser element comprises: a laminate structure composed of a first compound semiconductor layer, a third compound semiconductor layer constituting a light-emitting region and a saturable absorption region, and a second compound semiconductor layer which are laminated one on another in that order; a second electrode; and a first electrode. The laminate structure has a ridge stripe structure, and the second electrode is separated by a separation groove into a first portion which is used to send direct current to the first electrode via the light-emitting region to put it into a forward bias state and a second portion which is used to apply an electric field to the saturable absorption region. Assuming that the minimum width of the ridge stripe structure is W<SB POS="POST">MIN</SB>and that the width of the ridge stripe structure of the second portion of the second electrode on a boundary between the second portion of the second electrode and the separation groove is W<SB POS="POST">2</SB>, the relationship W<SB POS="POST">2</SB>/W<SB POS="POST">MIN</SB>>1 is satisfied. <P>COPYRIGHT: (C)2012,JPO&INPIT |
