| 摘要 |
The substrate (1') has a main face associated to a layer based on an absorbing material i.e. chalcopyrite, and another main face. An alkaline barrier layer (9') is placed on a surface portion of the latter main face, where the barrier layer is made of dielectric material e.g. sub-stoichiometric or super-stoichiometric silicon nitride, silicon oxide, silicon oxynitride, aluminum nitride, aluminum oxide, or aluminum oxynitride. The barrier layer includes a thickness nearing 50 nanometer. An independent claim is also included for a method for manufacturing a substrate. |
