| 摘要 |
FIELD: physics. ^ SUBSTANCE: device according to the invention includes: a III-nitride structure, having: a first layer (22). That first layer virtually does not contain indium; a second layer (26), grown on top of the first layer, wherein that second layer is not a monocrystalline layer, containing indium; a third layer (22) lying between the first layer (22) and the second layer (26) and in direct contact with the first layer, wherein that third layer is not a monocrystalline layer, virtually does not contain indium, and device layers (10) grown on top of the second layer. The device layers contain a III-nitride light-emitting layer lying between an n-type region and a p-type region. Three more versions of the III-nitride light-emitting device are also disclosed. ^ EFFECT: reduced strain in the device, which in turn improves operating characteristics of the device. ^ 16 cl, 19 dwg |
