SILICON CARBIDE STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A silicon carbide structure and a manufacturing method thereof are provided to control conductivity without the degradation of physical and chemical characteristics by not using an additional agent. CONSTITUTION: An SiC(Silicon carbide) layer is evaporated on the top of a base plate with a chemistry vapor deposition method(S11). A pure SiC structure is obtained by eliminating the base plate(S12). The SiC structure is heat-treated in the thermal process chamber(S13). The diameter of the SiC structure which is heat-treated is 20 to 100micrometers. Conductivity of SiC is reduced. The upper surface and bottom surface of the SiC structure are processed and eliminated as the thickness of 200 to 1500micrometers(S14).