发明名称 |
Aligned polymers for an organic TFT |
摘要 |
A method for forming a transistor comprising the step of forming an active interface of the transistor between a semiconductive layer and a gate insulator layer by solution deposition of a second polymer layer on top of a solution-processed polymer layer that has not been converted into an insoluble form prior to the deposition of the second polymer layer. |
申请公布号 |
EP1890346(A3) |
申请公布日期 |
2012.06.20 |
申请号 |
EP20070075979 |
申请日期 |
2000.06.21 |
申请人 |
CAMBRIDGE ENTERPRISE LIMITED |
发明人 |
SIRRINGHAUS, HENNING;FRIEND, RICHARD;WILSON, RICHARD |
分类号 |
H01L51/10;C09K19/38;H01L51/00;H01L51/05 |
主分类号 |
H01L51/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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