发明名称 Aligned polymers for an organic TFT
摘要 A method for forming a transistor comprising the step of forming an active interface of the transistor between a semiconductive layer and a gate insulator layer by solution deposition of a second polymer layer on top of a solution-processed polymer layer that has not been converted into an insoluble form prior to the deposition of the second polymer layer.
申请公布号 EP1890346(A3) 申请公布日期 2012.06.20
申请号 EP20070075979 申请日期 2000.06.21
申请人 CAMBRIDGE ENTERPRISE LIMITED 发明人 SIRRINGHAUS, HENNING;FRIEND, RICHARD;WILSON, RICHARD
分类号 H01L51/10;C09K19/38;H01L51/00;H01L51/05 主分类号 H01L51/10
代理机构 代理人
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