| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a nonvolatile memory capable of improving the characteristics. <P>SOLUTION: A semiconductor device is configured to have control gate electrodes CG, memory gate electrodes MG disposed so as to be adjacent to the control gate electrodes CG, insulating films 3, and insulating films 5 each having a charge storage portion in its inside. The memory gate electrodes MG are composed of a silicon film having first silicon regions 6a disposed on the insulating films 5 and second silicon regions 6b disposed above the first silicon regions 6a. The second silicon regions 6b contain a p-type impurity. The p-type impurity concentration of the first silicon regions 6a is configured to be lower than that of the second silicon regions 6b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
