发明名称 Wafer-scale x-ray detector and method of manufacturing the same
摘要 <p>A wafer-scale x-ray detector (100) and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate (120) electrically connected to a printed circuit substrate (110); a chip array having a plurality of pixel pads (132) formed on a central region thereof and a plurality of pin pads (134) formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes (150) formed to correspond to the pixel pads; vertical wirings (142) and horizontal wirings (144) formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer (140) having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer (160) and a common electrode (170) which cover the pixel electrodes on the redistribution layer.</p>
申请公布号 EP2463908(A2) 申请公布日期 2012.06.13
申请号 EP20110178442 申请日期 2011.08.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JAE-CHUL;KIM, CHANG-JUNG;KIM, SANG-WOOK;KIM, SUN-IL
分类号 H01L27/146 主分类号 H01L27/146
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