METHOD OF FORMING QUANTUM DOTS

摘要

PURPOSE: A method for forming a quantum dot is provided to precisely and freely control density and size of the quantum dot by using neutral particle beam which is processed at a low-temperature. CONSTITUTION: An insulating layer is formed by irradiating a substrate with nitrogen neutral particle beam(S1010). Silane gas is injected into a nitrogen neutral particle beam processing apparatus. A neutral particle is formed through the silane gas injection. The neutral particle is changed into amorphous silicon and a nano crystal. A silicon film in which the amorphous silicon and the nano crystal are mixed is formed at the upper side of the insulating layer(S1020). A quantum dot is formed by etching the amorphous silicon from the silicon film.