MAGNETIC MEMORY CELL WITH MULTI-LEVEL CELLMLC DATA STORAGE CAPABILITY

摘要

PURPOSE: A magnetic memory cell with multi-level cell data storage capacity is provided to recode data in a magnetic memory element like a spin-torque transmission random access memory. CONSTITUTION: A multi-level cell magnetic memory cell includes a first magnetic memory element(MTJ1) and a second magnetic memory element(MTJ2) connected to a first control line and a switching device(110). A first memory element is connected in parallel to a second memory element. The first and second memory elements are serially connected to a switching device between the first control line and the second control line. Programming currents passes through between the first control line and the second control line to simultaneously set the first magnetic memory element and the second magnetic memory element with programmed resistance.