COPPER BLEND I-VII COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICES

摘要

PURPOSE: A copper blend I-VII compound semiconductor light emitting device is provided to improve quantum efficiency by forming an I-VII compound semiconductor light emitting device in order to have excition combination which is bigger than an III family nitride semiconductor light-emitting layer twice. CONSTITUTION: An I-VII compound semiconductor emitting layer(10) is arranged between an n-type zone(14) and a p-type zone(18). A first barrier layer(12) is arranged between the n-type zone and the I-VII compound semiconductor emitting layer. A second barrier layer(13) is arranged between the p- type zone and the I-VII compound semiconductor emitting layer. A transparent electrode(22) is connected with the p- type zone. A metal electrode(24) is connected with the n- type zone.