发明名称 SEMICONDUCTOR MEMORY DEVICE AND ACCESS METHOD THEREOF
摘要 Example embodiments provide a semiconductor memory device that may include: a cell array arranged in pluralities of rows and columns; and a sense amplifier conducting writing and reading operations to the cell array in response to writing and reading commands in correspondence with an access time, which may be variable in period. The sense amplifier adjusts pulse widths of write-in and read-out data in accordance with a period of the access time.
申请公布号 US2012127810(A1) 申请公布日期 2012.05.24
申请号 US201213360093 申请日期 2012.01.27
申请人 KIM DAE-HYUN;PARK KWANG-IL;KIM KYOUNG-HO;KIM HYUN-JIN;KIM HYE-RAN 发明人 KIM DAE-HYUN;PARK KWANG-IL;KIM KYOUNG-HO;KIM HYUN-JIN;KIM HYE-RAN
分类号 G11C8/18;G11C7/00 主分类号 G11C8/18
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