发明名称 MEMORY SUPPORT STRUCTURE
摘要 A memory support structure includes a base for physically and electrically connecting to a substrate. When so connected, the memory support structure extends orthogonal to the substrate to a height of at least 2.5 cm. The memory support structure provides at least three sockets for receiving and engaging memory modules so that they extend parallel to the substrate. The memory support structure also includes electrical pathways for electrically connecting the sockets and the base so that a memory module inserted into one of said sockets is electrically connected to the substrate.
申请公布号 US2012120582(A1) 申请公布日期 2012.05.17
申请号 US20100947473 申请日期 2010.11.16
申请人 NGUYEN VINCENT 发明人 NGUYEN VINCENT
分类号 G06F1/16;H05K3/30 主分类号 G06F1/16
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