发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR CRYSTAL GROWTH EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element including a semiconductor layer having uniform compositions across a surface of a substrate. <P>SOLUTION: A method for manufacturing a semiconductor light-emitting element includes a step for forming by organic vapor phase epitaxy a laminated structure of a compound semiconductor composed of a group III element and a group V element on a substrate 4 mounted on a substrate mounting part 3 provided on a surface of a tray 1 disposed above heating means, the surface being opposed to a surface facing the heating means. A compound semiconductor film 2 including at least one group III element constituting the laminated structure of the compound semiconductor, and at least one group V element constituting the laminated structure of a compound semiconductor layer, is previously formed on a surface of the substrate mounting part 3 before the laminated structure is formed. The substrate 4 is mounted on the substrate mounting part 3 via the compound semiconductor film 2, and the laminated structure is then formed on the substrate 4. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012094700(A) 申请公布日期 2012.05.17
申请号 JP20100241044 申请日期 2010.10.27
申请人 TOSHIBA CORP 发明人 SEKIGUCHI HIDEKI
分类号 H01L21/205;C23C16/458;H01L33/02 主分类号 H01L21/205
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