发明名称 |
METHOD OF EXTRACTING JUNKS SLUDGE INTERNAL HIGH PURITY SILICON CARBIDE GENERATED AT WAFER CUTTING PROCESS |
摘要 |
PURPOSE: A method for extracting high purity silicon carbide in spent sludge is provided to reuse high purity silicon carbide for a raw material of a semiconductor and a wafer for a solar cell by separating the high purity silicon carbide from an ingot spent sludge in a wafer slicing process. CONSTITUTION: A surfactant is added to an ingot spent sludge(10). Second separation sludge is generated by separating silicon and silicon carbide by dissolving the silicon in first separation sludge(20). The silicon carbide is obtained by removing water from the composition of the second separation sludge(30). An acid material and the water are added to the silicon carbide(40). Neutralized silicon carbide is obtained by eliminating the water from the silicon carbide(50). The neutralized silicon carbide is washed and dried(60).
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申请公布号 |
KR20120049001(A) |
申请公布日期 |
2012.05.16 |
申请号 |
KR20100110538 |
申请日期 |
2010.11.08 |
申请人 |
JEROX CO., LTD. |
发明人 |
LEE, BUM SEOK;CHOI, KYU SEOK;KIM, YONG BAE |
分类号 |
H01L21/304;B24B55/12 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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