发明名称 ION IMPLANTATION SYSTEM AND ION IMPLANTATION METHOD USING THE SAME
摘要 According to the present invention, an ion implantation system capable of implanting ions into a large substrate and reducing a manufacturing cost, and an ion implantation method using the same may be provided. The ion implantation system includes a plurality of ion implantation assemblies arranged in a line, each ion implantation assembly to implant ions into a partial region of the substrate. This allows for a compact ion implantation system to implant ions into a very large substrate. The substrate moves through the ion implantation system in a first direction, turns around, and then moves back through the ion implantation system in a second and opposite direction, where ions are implanted into the substrate while the substrate is moving to in both directions. The path in the first direction can be spaced-apart from the path in the second direction to allow for two substrates to be processed simultaneously.
申请公布号 US2012100703(A1) 申请公布日期 2012.04.26
申请号 US201113236985 申请日期 2011.09.20
申请人 KIM HYUN-GUE;KIM SANG-SOO;SAMSUNG MOBILE DISPLAY CO., LTD. 发明人 KIM HYUN-GUE;KIM SANG-SOO
分类号 H01L21/265;G21K5/10;H01J49/28 主分类号 H01L21/265
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