摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel semiconductor device in which the number of writing times is not limited and which can hold the storage content even under no power supply circumstances, and improve the reliability of writing and readout while reducing the circuit scale. <P>SOLUTION: When verification operation and readout are performed on a memory cell using a transistor including an oxide semiconductor layer, transistors of dual-gate driving with different threshold voltages are used as resistors. This stabilizes the verification operation and readout operation with just one reference potential circuit. <P>COPYRIGHT: (C)2012,JPO&INPIT |