| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory apparatus which allows stable programming of a plurality of memory cells having programming characteristics different from one another, and to provide a semiconductor memory apparatus which can drive a programming current pulse having a supply time specific to each of a plurality of sections. <P>SOLUTION: The semiconductor memory apparatus includes: a first write control code generation unit and a data write unit. The first write control code generation unit is configured to generate a first write control code which is updated with a cycle specific to each of a plurality of sections during the section in response to a programming verification flag signal and a programming enable signal. The data write unit is configured to output a first programming current pulse having a magnitude corresponding to a code combination of the first write control code which is updated. <P>COPYRIGHT: (C)2012,JPO&INPIT |
