Organic luminescence transistor device and manufacturing method thereof

摘要

The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on a side of an upper surface of the luminescent layer.