发明名称 FILM FORMING METHOD AND FILM FORMING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a film forming method and a film forming device capable of forming a film of satisfactory morphology, without complicating constitution of a film forming device, and capable of enhancing an operation efficiency of the film forming device. <P>SOLUTION: A liquid-like film forming raw material liquid formed by dissolving a film forming raw material into a solvent is supplied onto a surface of a semiconductor substrate 28, in a film forming raw material deposition chamber 17, the solvent contained in the film forming raw material liquid is phase-changed from the liquid to a gas, the film forming raw material dissolved in the solvent is thereby deposited onto the semiconductor substrate 28, the film forming raw material formed on the surface of the semiconductor substrate 28 is reacted thereafter by heating or by addition of a reaction reagent, in a reaction chamber 18 different from the film forming raw material deposition chamber 17, and the film is formed thereby on the surface of the semiconductor substrate 28. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012071257(A) 申请公布日期 2012.04.12
申请号 JP20100218133 申请日期 2010.09.29
申请人 ELPIDA MEMORY INC 发明人 OIDE HIROYUKI
分类号 B05D3/00;C23C18/02;H01L21/31;H01L21/312 主分类号 B05D3/00
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