发明名称 METHOD FOR FORMING LIGHT GUIDE LAYER IN SEMICONDUCTOR SUBSTRATE
摘要 A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer.
申请公布号 US2012088323(A1) 申请公布日期 2012.04.12
申请号 US201113243763 申请日期 2011.09.23
申请人 BAE DAE-LOK;PARK BYUNG-LYUL;KANG PIL-KYU;CHOI GIL-HEYUN;MOON KWANG-JIN 发明人 BAE DAE-LOK;PARK BYUNG-LYUL;KANG PIL-KYU;CHOI GIL-HEYUN;MOON KWANG-JIN
分类号 H01L33/58;H01L33/02 主分类号 H01L33/58
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