Silver metallization by damascene method

摘要

A method of forming interconnects in an integrated circuit, comprising: forming a dielectric layer over a substrate; forming a groove (114) for an interconnect in the dielectric layer; forming an aluminium seed layer over the upper surface of the dielectric layer, over sidewalls of the groove, and over a bottom of the groove to a thickness of approximately 200 Å; zincating the substrate to form a zinc coating on the aluminium seed layer; plating the substrate with silver to form a conformal silver layer (116) on an upper surface of the dielectric layer and on sidewalls of the groove, filling an unfilled portion of the groove; and removing portions of the conformal silver layer on the dielectric layer, leaving a silver interconnect within the groove.