| 摘要 |
A manufacturing method for an infrared sensor includes the following steps: providing a wafer having several chips and a substrate; forming four soldering portions, a thermistor, and an infrared sensing layer on the bottom surface of each chip, wherein the soldering portions are connected electrically to the thermistor and the infrared sensing layer; disposing a soldering material onto at least one bonding location for each soldering portion; backside-etching each chip of the wafer to form a sensing film and a surrounding wall around the sensing film; bonding the wafer and the substrate; heating the soldering materials to connect the substrate and each chip of the wafer; disposing an infrared filter on the surrounding wall of each chip; cutting the wafer and the substrate to form a plurality of individual infrared sensors. The instant disclosure further provides an associated infrared sensor.
|
