发明名称 COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, PRODUCTION METHOD OF COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, PRODUCTION METHOD OF P-TYPE DIFFUSION LAYER, AND MANUFACTURING METHOD OF SOLAR CELL
摘要 <P>PROBLEM TO BE SOLVED: To provide a composition for forming a p-type diffusion layer capable of forming a p-type diffusion layer with small in-plane variation while reducing internal stress of a silicon substrate and warpage thereof in the manufacturing process of a solar cell using a crystal silicon substrate, and to provide a production method of a composition for forming a p-type diffusion layer, a production method of a p-type diffusion layer, and a manufacturing method of a solar cell. <P>SOLUTION: The composition for forming a p-type diffusion layer contains glass powder containing an acceptor element and a dispersion medium, wherein the frequency distribution of the glass powder in volume reference has a plurality of maximum peaks and, in any two maximum peaks out of the plurality of maximum peaks, particle size of the maximum peak on the small diameter side is equal to 0.01-0.50 times that of the maximum peak on the large diameter side. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012069806(A) 申请公布日期 2012.04.05
申请号 JP20100214316 申请日期 2010.09.24
申请人 HITACHI CHEM CO LTD 发明人 KIZAWA KEIKO;YOSHIDA MASATO;NOJIRI TAKESHI;OKANIWA KAORU;MACHII YOICHI;IWAMURO MITSUNORI;ADACHI SHUICHIRO;SATO TETSUYA
分类号 H01L21/225;H01L31/04 主分类号 H01L21/225
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