发明名称 |
METHOD FOR ETCHING HIGH-ASPECT-RATIO FEATURES |
摘要 |
A method for etching high-aspect-ratio features is disclosed. The method is applicable in forming a nanoscale deep trench having a smooth and angle-adjustable sidewall. The method includes: forming a patterned photoresist layer on a surface of a silicon substrate for exposing a part of the silicon substrate; and supplying a process gas simultaneously containing sulfur hexafluoride (SF6) and fluorinated carbon composition into a chamber in which the substrate in positioned for carrying out a deep reactive ion etching operation to etch the part of the silicon substrate for forming the deep trench. The method forms a nanoscale deep trench with a high silicon-to-photoresist etching selectivity. |
申请公布号 |
US2012083128(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US201113079790 |
申请日期 |
2011.04.04 |
申请人 |
HUNG YUNG-JR;LEE SAN-LIANG;NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
HUNG YUNG-JR;LEE SAN-LIANG |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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地址 |
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