| 摘要 |
When a leakage type determining circuit determines that leakage current components of a gate leakage and a substrate leakage are larger in a resume standby mode, a VDDR regulator generates a power supply voltage VDDR at a first voltage level lower than a power supply voltage VDD, and supplies the voltage as a power supply voltage VDDR1 to an SRAM module via a selector switch. When the leakage type determining circuit determines that a leakage current of a channel leakage is larger, the VDDR regulator supplies the power supply voltage VDDR1 higher than the first voltage level and lower than the power supply voltage VDD to the SRAM module. Also, an ARVSS regulator supplies a cell source power supply voltage higher than a reference voltage to an SRAM module in another region. |
