REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE

摘要

A reverse-conducting power semiconductor device (1) with a wafer (10) having a first main side (11) and a second main side (15), which is arranged parallel to the first main side (11), is provided. The device comprises a plurality of diode cells (96) and a plurality of IGCT cells (91), wherein each IGCT cell comprises layers in the following order between the first and second main side (11, 15): - a cathode electrode (2), - a first cathode layer (4) of the first conductivity type, - a base layer (6) of the second conductivity type, - a drift layer (3) of the first conductivity type, - a buffer layer (8) of the first conductivity type, - a first anode layer (5) of the second conductivity type, and - a first anode electrode (25). Each IGCT cell (91) further comprises a gate electrode (7), which is arranged lateral to the first cathode layer (4) and separated from it by the base layer (6). Each diode cell (96) comprises a second anode electrode (28) on the first main side (11), which is in contact to a second anode layer (55) of the second conductivity type, which second anode layer (55) is separated from the base layer (6) by the drift layer (3), and a second cathode layer (45) of the first conductivity type on the second main side (15), which is arranged alternating to the first anode layer (5). The device comprises at least one mixed part (99), in which the second anode layers (55) of the diode cells (96) alternate with the first cathode layers (4) of the IGCT cells (91).