| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a leakage current and improve a withstand voltage of an HFET which includes a semiconductor laminate without turning a compound semiconductor layer beneath a channel layer included therein into a p type by performing impurity doping. <P>SOLUTION: The semiconductor laminate includes at least first, second and third compound semiconductor layers (13, 14, and 15) sequentially deposited on a substrate (11), where at least a partial layer (16) of the first compound semiconductor layer (13) is modified to an amorphous substance, and the second compound semiconductor layer (14) has a smaller band gap than that of the first compound semiconductor layer (13), making it capable of acting as a light absorption layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
