LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE

摘要

PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve luminous efficiency of the light emitting device by reducing a leakage current in an active layer. CONSTITUTION: A light emitting structure includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer is formed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The active layer includes a plurality of well layers and one or more barrier layers. The barrier layer includes a first nitride layer and a second nitride layer. An energy gap between the first and second nitride layers is 74-83 meV.