| 摘要 |
1282635 Semi-conductor devices NIPPON ELECTRIC CO Ltd 12 Sept 1969 [14 Sept 1968] 45193/69 Heading H1K A GaAs semi-conductor device includes a low resistivity substrate 1 doped with Te, S or Se, a low resistivity first layer 2 grown thereon and doped heavily with Sn, Ge or Si, and a higher resistivity second layer 3 grown on the layer 2. In the preferred method of manufacture the first layer 2 is vapour grown on a Te doped GaAs substrate heated to 750‹ C. using hydrogen as a carrier gas bubbled through arsenic trichloride at 0‹ C. A source of Ga and Sn is also heated at 850‹ C. in the reaction tube. The higher resistivity layer 3 is grown similarly, except that Sn is omitted from the Ga source. The layers may also be grown from solution. The invention is applicable to the manufacture of Schottky barrier diodes, varactor diodes, Gunn or L.S.A. diodes, transistors or integrated circuits.
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