| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance change memory device capable of setting a compliance current corresponding to each memory cell. <P>SOLUTION: A current limit circuit includes a first current generation circuit, a second current generation circuit, and a determination circuit. The first current generation circuit stores a cell current of a first time as a storage current, and generates a first current having a current value obtained by being α times as large as the current value of the storage current. The second current generation circuit generates a second current having a current value obtained by being (β/α) times (α>β) as large as a cell current of a second time after the first time. The determination circuit outputs a control signal when determining that the current value of the second current exceeds the current value of the storage current. The first current generation circuit newly stores the storage current at timing based on the control signal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
