| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing floating capacitance and capable of achieving high speed and low power consumption by forming an element on a GaAs layer formed above a cavity in a GaAs device, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device comprises: a cavity 14 formed above a semiconductor substrate 11; a GaAs epitaxial layer 13 formed above the cavity 14; a gate electrode 15 formed on the GaAs epitaxial layer 13; and a pair of a source electrode 16 and a drain electrode 17 that are each formed on the GaAs epitaxial layer 13 so as to sandwich the adjacent gate electrode 15. <P>COPYRIGHT: (C)2012,JPO&INPIT |
