| 摘要 |
<p>This radiation detector has an antimony composition ratio in a second high-resistance film, which has antimony sulfide as a principal ingredient, of between 61mol% and 80mol%, which is higher than that of the prior art; therefore, the second high-resistance film exhibits properties closer to metal than that of the prior art. Consequently, even in the case of a decline in the resistance of a semiconductor layer when radiation is applied, it is possible to keep the voltage applied to the second high-resistance layer lower than when using the prior art; therefore, it is possible to suppress dielectric breakdown of the second high-resistance film. As a result, even when radiation detection is conducted repeatedly, it is possible to minimize the increase of defective pixels, and also possible to improve durability.</p> |
