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发明名称
Flash memory device for suppressing leakage through interdielectric and method for manufactruing the same
摘要
申请公布号
KR101124564(B1)
申请公布日期
2012.03.16
申请号
KR20080059240
申请日期
2008.06.23
申请人
发明人
分类号
H01L21/8247
主分类号
H01L21/8247
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代理人
主权项
地址
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