| 发明名称 |
INDIUM TARGET AND METHOD FOR PRODUCTION THEREOF |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an indium target capable of favorably suppressing the occurrence of abnormal discharge, and to provide a method for production thereof. <P>SOLUTION: The indium target has an arithmetical mean roughness (Ra) of 1.6 μm or less on a target surface and a ten-point mean roughness (Rz) of 15 μm or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012052173(A) |
申请公布日期 |
2012.03.15 |
| 申请号 |
JP20100194532 |
申请日期 |
2010.08.31 |
| 申请人 |
JX NIPPON MINING & METALS CORP |
发明人 |
MAEKAWA TAKAMASA;ENDO YOSUKE |
| 分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
| 代理机构 |
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