发明名称 METHOD FOR FORMING CU FILM AND STORAGE MEDIUM
摘要 In a method for forming a Cu film, a substrate is loaded in a processing chamber and a gaseous film-forming source material including monovalent amidinate copper and a gaseous reducing agent including a carboxylic acid are introduced into the processing chamber. Then, a Cu film is deposited on the substrate by reacting the film-forming source material and the reducing agent together on the substrate.
申请公布号 US2012064248(A1) 申请公布日期 2012.03.15
申请号 US201113229018 申请日期 2011.09.09
申请人 KOJIMA YASUHIKO;HIWA KENJI;TOKYO ELECTRON LIMITED 发明人 KOJIMA YASUHIKO;HIWA KENJI
分类号 C23C16/06;C23C16/44 主分类号 C23C16/06
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