发明名称 |
PROCESS FOR IMPROVING THE SURFACE ROUGHNESS OF A WAFER |
摘要 |
The present invention relates to a process for reducing the roughness of the free surface of a semiconductor wafer, said process comprising a single annealing step for smoothing said free surface, said single annealing step being carried out as a RTA under an atmosphere of pure argon, characterized in that before the RTA the atmosphere of the annealing environment is purged in a controlled manner so as to establish a controlled purged atmosphere allowing reduction of preliminary pollutants on the wafer. |
申请公布号 |
EP1690289(B9) |
申请公布日期 |
2012.03.14 |
申请号 |
EP20030789586 |
申请日期 |
2003.12.03 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
NEYRET, ERIC;ARENE, EMMANUEL;ECARNOT, LUDOVIC |
分类号 |
H01L21/324;H01L21/302;H01L21/306;H01L21/477;H01L21/762 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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