| 摘要 |
<p>A light emitting device includes a light emitting structure (120) comprising a first conductivity type semiconductor layer (122), an active layer (124) and a second conductivity type semiconductor layer (126); a first electrode (180) disposed on the first conductivity type semiconductor layer; an ohmic layer (140) disposed on a predetermined area of the second conductivity type semiconductor layer; a silicide layer (150) disposed on the ohmic layer, with contacting with the second conductivity type semiconductor layer; and a conductive supporting substrate (170) disposed on the silicide layer.</p> |
