| 摘要 |
PURPOSE:To mike it possible to perform high speed operation, in which relaxation vibration is suppressed, by providing an active layer in a multiple quantum well structure, the surfaces of laser resonators and a plurality of electrodes, which are divided with groove, in the axial direction connecting the surfaces of the resonators. CONSTITUTION:A P-type AlGaAs clad layer 22 is grown on a P-type GaAs substrate 21 by an MBE growing method. Then non-doped GaAs and AlGaAs are alternately laminated, and an active layer 23 is formed. Thereafter, both sides of the central part are chemically etched to the clad layer 22. Thus a mesa structure 25, which is extended in the direction along the axis of a resonator, is formed. Then, a P-type AlGaAs current blocking layer 26, an N-type AlGaAS embedded layer 27 and an N-type GaAs cap layer 28 are sequentially laminated, and the mesa structure 25 is embedded. Then parts of the cap layer 28 and the clad layer 24 are etched, and a groove 29 is formed. Thereafter, Zn is diffused into the active layer 23 directly beneath the groove 29. The well layer 23 becomes a mixed crystal state by said diffusion and the layer is transformed into saturable absorbing region 33. Then an SiO2 film 30 is closely attached to a part other than the groove 29. An electrode 31 and an electrode 32 are formed directly on the mesa structure 25, thereby the laser is completed. |
