发明名称 BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL DIAMOND SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a base material for growing a single crystal diamond and a method for manufacturing a single crystal diamond substrate attaining the growth of a single crystal diamond with a large area and good crystallinity and the low-cost manufacture of the single crystal diamond substrate of high quality. <P>SOLUTION: The base material 10 for growing the single crystal diamond includes at least a base material 13 made of material with a linear expansion coefficient smaller than that of MgO and not smaller than 0.5&times;10<SP POS="POST">-6</SP>/K; a single crystal MgO layer 11 formed on the side, where the single crystal diamond is grown, of the base material 13 by a laminating method; and a film 12 made of any one of an iridium film, a rhodium film and a platinum film heteroepitaxially grown on the single crystal MgO layer 11. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012041258(A) 申请公布日期 2012.03.01
申请号 JP20100264261 申请日期 2010.11.26
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 NOGUCHI HITOSHI;SHIRAI SHOZO
分类号 C30B29/04;C23C14/14;C23C16/27 主分类号 C30B29/04
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