发明名称 |
BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL DIAMOND SUBSTRATE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a base material for growing a single crystal diamond and a method for manufacturing a single crystal diamond substrate attaining the growth of a single crystal diamond with a large area and good crystallinity and the low-cost manufacture of the single crystal diamond substrate of high quality. <P>SOLUTION: The base material 10 for growing the single crystal diamond includes at least a base material 13 made of material with a linear expansion coefficient smaller than that of MgO and not smaller than 0.5×10<SP POS="POST">-6</SP>/K; a single crystal MgO layer 11 formed on the side, where the single crystal diamond is grown, of the base material 13 by a laminating method; and a film 12 made of any one of an iridium film, a rhodium film and a platinum film heteroepitaxially grown on the single crystal MgO layer 11. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012041258(A) |
申请公布日期 |
2012.03.01 |
申请号 |
JP20100264261 |
申请日期 |
2010.11.26 |
申请人 |
SHIN-ETSU CHEMICAL CO LTD |
发明人 |
NOGUCHI HITOSHI;SHIRAI SHOZO |
分类号 |
C30B29/04;C23C14/14;C23C16/27 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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