| 发明名称 |
MEMORY DEVICE HAVING THREE-DIMENSIONAL GATE STRUCTURE |
| 摘要 |
Subject matter disclosed herein relates to a memory device, and more particularly to a nonvolatile memory device having a recess structure and methods of fabricating same.
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| 申请公布号 |
US2012051129(A1) |
申请公布日期 |
2012.03.01 |
| 申请号 |
US20100869569 |
申请日期 |
2010.08.26 |
| 申请人 |
KIM NAM-KYEONG;CHOI JEONG-MIN;NUMONYX B.V. |
发明人 |
KIM NAM-KYEONG;CHOI JEONG-MIN |
| 分类号 |
G11C16/04;H01L21/336;H01L29/788 |
主分类号 |
G11C16/04 |
| 代理机构 |
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| 地址 |
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