发明名称 |
Confined resistance variable memory cell structures and methods |
摘要 |
Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.
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申请公布号 |
US8124445(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20100843695 |
申请日期 |
2010.07.26 |
申请人 |
KRAUS BRENDA D.;MARSH EUGENE P.;QUICK TIMOTHY A.;MICRON TECHNOLOGY, INC. |
发明人 |
KRAUS BRENDA D.;MARSH EUGENE P.;QUICK TIMOTHY A. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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