| 摘要 |
The disclosure provides a dense Cu thin film, a dense CuO thin film and the manufacturing process applied in metallization process of ultra-large scale integration (ULSI), which uses a two-step growth consisting of pre-deposition and annealing to form a dense Cu thin film or a dense CuO thin film. In the process, a copper-containing metal-organic complex is used as precursor and a reducing gas is used as carrier gas. The precursor is carried to a reactive system with a substrate by a carrier gas and pre-deposit a CuO thin film on the substrate under lower temperature. Next, stop supplying the precursor and raise the temperature or offer other energy to anneal the thin film with hydrogen gas or reducing gas, which reduces the CuO thin film to a smooth and dense Cu thin film. Then, choosing oxide containing gas as the react gas obtains the CuO thin film. |
