发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film. |
申请公布号 |
US2012040526(A1) |
申请公布日期 |
2012.02.16 |
申请号 |
US201113282494 |
申请日期 |
2011.10.27 |
申请人 |
ITANI TAKAHARU;MATSUO KOJI;NAKAMURA KAZUHIKO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITANI TAKAHARU;MATSUO KOJI;NAKAMURA KAZUHIKO |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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